Total dose measurement for ion implantation using laser ablation ICP-MS

Journal of analytical atomic spectrometry

Volumn 15, Issue 9, 2000, Pages 1139-1142

  Li, Fuhe ^a   Balazs, Marjorie K ^a   Pong, Raymond ^b  

^a Balazs Analytical Services   (United States)

^b Implant Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; ION IMPLANTATION; LASER ABLATION; MASS SPECTROMETRY; PLASMA APPLICATIONS; SILICON WAFERS;

INDUCTIVELY-COUPLED PLASMAS (ICP);

DOSIMETRY;

EID: 0034269735     PISSN: 02679477     EISSN: None     Source Type: Journal    
DOI: 10.1039/B001796P     Document Type: Article

References (6)

1. D. W. Duff and L. M. Rubin, Solid State Technol., 1998, 41(6), 83.
2. M. I. Current, Basics of Ion Implantation for Integrated Circuit Manufacturing, Greater Silicon Valley Ion Implant Users Group, 1994, ch. 3, pp. 1-10.
3. J. F. Ziegler, J. P. Briersack and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1996.
4. A. Montaser, Inductively Coupled Plasma Mass Spectrometry, Wiley, New York, 1998, ch. 3, pp. 194-220.
5. R. E. Russo, Appl. Spectrosc., 1995, 49(9), 14A.
6. A. J. Campbell and M. Humayun, Anal. Chem., 1999, 71(5), 939.