Highly efficient 115-μm-thick solar cells on industrial Czochralski silicon

Progress in Photovoltaics: Research and Applications

Volumn 8, Issue 5, 2000, Pages 465-471

  Warta, W ^a   Glunz, S W ^a   Dicker, J ^a   Knobloch, J ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; EFFICIENCY; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SURFACE TREATMENT; TEXTURES; THIN FILM DEVICES;

INDUSTRIAL CZOCHRALSKI SILICON; LIGHT INDUCED DEGRADATION; LIGHT TRAPPING PROPERTIES; REAR SURFACE RECOMBINATION;

SILICON SOLAR CELLS;

EID: 0034268273     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-159X(200009/10)8:5<465::AID-PIP350>3.0.CO;2-R     Document Type: Article

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