Optoelectronic generation and modulation of millimeter waves in a single InP-GaInAs photo heterojunction bipolar transistor

IEEE Photonics Technology Letters

Volumn 12, Issue 9, 2000, Pages 1240-1242

  Bilenca, A ^a   Lasri, J ^a   Eisenstein, G ^a   Ritter, D ^a   Sidorov, V ^a   Cohen, S ^a   Goldgeier, P ^a   Orenstein, M ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; ELECTRODES; LIGHT MODULATION; MILLIMETER WAVE DEVICES; PHOTOTRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSDUCERS;

PHOTO HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034264764     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.874248     Document Type: Article

References (11)

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