Nondestructive internal observation of metal-oxide-semiconductor LSI designed by 0.8 μm rule

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5312-5315

  Takenoshita, Hiroshi ^a  

^a NAGASAKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SIGNAL PROCESSING; CERAMIC MATERIALS; ETCHING; MICROPROCESSOR CHIPS; MOS DEVICES; NONDESTRUCTIVE EXAMINATION; PASSIVATION; PIEZOELECTRIC DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS;

PASSIVATED FILMS;

LSI CIRCUITS;

EID: 0034264761     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5312     Document Type: Article

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