RuRhMn and PtMn specular spin-valve with magnetic oxide layer

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2557-2559

  Tsuchiya, Y ^a   Li, S ^a   Sano, M ^a   Uesugi, T ^a   Araki, S ^a   Morita, H ^a   Matsuzaki, M ^a  

^a TDK CORPORATION   (Japan)

Author keywords

Magnetoresistance; MOL; Specular scattering; Spin valve; Thermal stability

Indexed keywords

FERROMAGNETIC MATERIALS; MAGNETIC HYSTERESIS; MAGNETRON SPUTTERING; MULTILAYERS; SILICON WAFERS; THERMOOXIDATION;

MAGNETIC OXIDE LAYERS (MOL); SPECULAR SCATTERING; SPIN VALVES (SV);

MAGNETORESISTANCE;

EID: 0034260918     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908508     Document Type: Article

References (11)

1. Magnetoresistance values exceeding 21% in symmetric spin valves
2. Enhanced giant magnetoresistance in spin-valves sandwiched between insulating NiO
3. Large MR ratios in spin valves bounded with insulating antiferromagnets
4. Which spin valve for next GMR head generation{?}
5. Novel magnetoresistance effect in layered magnetic structures: Theory and experiment
6. 1-x : A new exchange bias material for permalloy
7. New antiferromagnetic RuRhMn film and its application for spin valves
8. Oxygen as a surfactant in the growth of giant magnetoresistance spin valves
9. Specular electron scattering in giant magnetoresistance spin valves
10. Specular reflection in spin valves bounded by NiO layers