Electrostatic discharge testing of tunneling magnetoresistive (TMR) devices

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2809-2811

  Wallash, Al ^a   Hillman, Jim ^a   Sharma, Manish ^b   Wang, Shan X ^b  

^a MAXTOR CORPORATION   (United States)

^b Stanford University   (United States)

Author keywords

Dielectric breakdown; Electrostatic discharge; ESD; Magnetic tunnel junctions; Tunneling magnetoresistive (TMR)

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC DEVICES; ELECTRON TUNNELING; ELECTROSTATIC DEVICES; TUNNEL JUNCTIONS;

ELECTROSTATIC DISCHARGE (ESD); TUNNELING MAGNETORESISTIVE (TMR) DEVICES;

MAGNETORESISTANCE;

EID: 0034260829     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908596     Document Type: Article

References (4)

1. Dielectric breakdown of ferromagnetic tunnel junctions
2. Electrical breakdown of magnetic tunneling junction with AlOx barrier formed by radical oxidation
3. Magnetic changes in GMR heads caused by electrostatic discharge
4. Spin-dependent tunneling junctions with hard magnetic layer pinning