Chemical shift of the nitrogen electrons in Fe16N2(001) single crystal films epitaxially grown by molecular beam epitaxy

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2921-2923

  Takahashi, H ^a   Igarashi, M ^a   Sakuma, A ^b   Sugita, Y ^c  

^a HITACHI LTD   (Japan)

^b HITACHI CABLE LTD   (Japan)

^c TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Binding energy; Chemical shift; Fe N martensite; Fe16N2; Fe4N; N concentration; Saturation magnetization; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; ELECTRONS; FERROMAGNETIC MATERIALS; MAGNETIC COUPLINGS; MAGNETIZATION; MARTENSITE; MOLECULAR BEAM EPITAXY; NITROGEN; POLARIZATION; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFT; COULOMB ENERGY;

FILM GROWTH;

EID: 0034260495     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908628     Document Type: Article

References (9)