Transport properties of a nanotube-based transistor

European Physical Journal D

Volumn 8, Issue 3, 2001, Pages 353-355

  Esfarjani, K ^a,d   Farajian, A A ^b   Ebrahimi, F ^c   Kawazoe, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATL INST OF MAT AND CHEM RES   (Japan)

^c SHAHID BEHESHTI UNIVERSITY OF MEDICAL SCIENCES   (Iran)

^d SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTRANSISTORS; NANOTUBES;

GATE LENGTH; ROTATIONAL SYMMETRIES; TIGHT BINDING;

TRANSPORT PROPERTIES;

EID: 0034258481     PISSN: 14346060     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100530170128     Document Type: Article

References (6)

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