Nonequilibrium processes in capacitive sensors based on porous silicon

Technical Physics Letters

Volumn 26, Issue 9, 2000, Pages 778-780

  Tutov, E A ^a   Andryukov, A Yu ^a   Ryabtsev, S V ^a  

^a VORONEZH STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034258224     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1315491     Document Type: Article

References (16)

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