Formation and decay processes of three-dimensional silicon islands on the Si(111) 7×7 surface

Applied Surface Science

Volumn 162, Issue , 2000, Pages 37-41

  Hayashi, Kazuhiko ^a   Ichimiya, Ayahiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DECOMPOSITION; INTERFACES (MATERIALS); RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; STACKING FAULTS; SURFACE STRUCTURE;

THERMAL RELAXATION;

SEMICONDUCTING SILICON;

EID: 0034250878     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00167-7     Document Type: Article

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4. Ichimiya A., Tanaka Y., Ishiyama K. Phys. Rev. Lett. 76:1996;4721.
5. Ichimiya A., Tanaka Y., Hayashi K. Surf. Sci. 386:1997;182.
6. Takayanagi K., Tanishiro Y., Takahashi S., Takahashi M. Surf. Sci. 164:1985;367.