Theory for semiconductor nanostructure reactivity to gas environment

Sensors and Actuators, B: Chemical

Volumn 68, Issue 1, 2000, Pages 17-21

  Ninno, D ^a   Iadonisi, G ^a   Buonocore, F ^a   Cantele, G ^a   Di Francia, G ^b  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b ENEA CR Portici   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ENERGY ABSORPTION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; POROUS SILICON; QUENCHING; SEMICONDUCTOR MATERIALS; SURFACE CHEMISTRY; VARIATIONAL TECHNIQUES;

NANOSTRUCTURE REACTIVITY; PEAK POSITION SHIFT; PHOTOLUMINESCENCE QUENCHING;

CHEMICAL SENSORS;

EID: 0034250398     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00441-X     Document Type: Article

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