Transitional behavior of tin oxide semiconductor under a step-like humidity change

Sensors and Actuators, B: Chemical

Volumn 67, Issue 1, 2000, Pages 36-42

  Kuse, Takashi ^a   Takahashi, Sachio ^a  

^a New Cosmos Electric Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; DESORPTION; REACTION KINETICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICES; TEMPERATURE; THICK FILMS; VAPORS; WATER;

SEMICONDUCTOR SENSOR; STEP LIKE CHANGE; THICK FILM SENSORS; TIME DEPENDENT BEHAVIOR; TRANSITIONAL BEHAVIOR; WATER VAPOR;

CHEMICAL SENSORS;

EID: 0034249855     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00334-8     Document Type: Article

References (6)

1. H. Ihokura, Doctoral Thesis, Kyushu University, 1983.
2. 2. Surf. Sci. 86:1979.
3. 2 thick films analyzed by FTIR spectroscopy and conductance measurements. Sens. Actuators, B. 24-25:1995.
4. 2 thick films by sensitivity and permittivity measurement. Sens. Actuators, B. 24-25:1995.
5. Egashira M., Nakashima M., Kawasumi S. Temperature programed desorption study of water absorbed on metal oxides: 2. Tin oxide surface. J. Phys. Chem. 85:1981.
6. Winter E.R.S. J. Chem. Soc. 1968;2889.