Modeling the p-n junction i-u characteristic for an accurate calibration-free temperature measurement

IEEE Transactions on Instrumentation and Measurement

Volumn 49, Issue 4, 2000, Pages 901-904

  Kanoun, Olfa ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; POLYNOMIALS; SEMICONDUCTOR DIODES; TEMPERATURE MEASUREMENT;

SHOCKLEY MODEL;

SEMICONDUCTOR JUNCTIONS;

EID: 0034246865     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.863946     Document Type: Article

References (7)

1. T. J. Quinn, Temperature. New York: Academic, 1983.
2. O. Kanoun, "Measuring temperature calibration free with bipolar transistors," in IEEE Int. Symp. Circuits and Systems (ISCAS), vol. 6, Monterey, CA, 1998, pp. 617-620.
3. T. C. Verster, "p-n Junction as an ultra linear calculable thermometer," Electron. Lett., vol. 4, no. 9, pp. 175-176, May 1968.
4. Fortschritt-Berichte, Reihe 8, Nr. 587R. Holmer, Untersuchungen zur Genauigkeitssteigerung der kalibrationsfreien Temperaturmessung mit Halbleiter-pn-Übergängen. Düsseldorf, Germany: VDI-Verlag, 1996.
5. VDI BerichteO. Kanoun and H.-R. Tränkler, "Kalibrationsfreie temperaturmessung auf der basis von pn-übergängen," in Temperatur'98. Düsseldorf, Germany: VDI-Verlag, vol. 379, pp. 127-132.
6. W. Becker, M. Lesinski, and H. Fomm, "Temperaturmessung mit Hilfe von pn-Übergängen," Radio Fernsehen und Elektronik, vol. 30, no. 8, pp. 516-517, 1981.
7. I. E. Getreu, Modeling the Bipolar Transistor. Amsterdam, The Netherlands: Elsevier, 1978, vol. I.