Noise effects in avalanche photodiodes

IEEE Transactions on Education

Volumn 43, Issue 3, 2000, Pages 321-323

  Woods, R C ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PHOTODIODES; SHOT NOISE; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; EXCESS NOISE FACTORS;

ENGINEERING EDUCATION;

EID: 0034246378     PISSN: 00189359     EISSN: None     Source Type: Journal    
DOI: 10.1109/13.865208     Document Type: Article

References (6)

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2. _, "" Soft threshold" result in impact ionization derived from "hardsphere" mode," Appl. Phys. Lett., vol. 52, pp. 65-66, 1988.
3. R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, 1966.
4. _, "The distribution of gains in uniformly multiplying avalanche photodiodes: Theory," IEEE Trans. Electron Devices, vol. ED-19, pp. 703-713, 1972.
5. 0.53As," Appl. Phys. Lett., vol. 36, pp. 218-220, 1980.
6. Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, and D. E. Ackley, "A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction," OSA/IEEE J. LightwaveTechnol., vol. 10, pp. 182-193, 1992.