High-temperature excitons in GaAs quantum wells embedded in AlAs/GaAs superlattices

Vacuum

Volumn 58, Issue 2, 2000, Pages 478-484

  Donchev, V ^a   Ivanov, Tzv ^a   Ivanov, I ^b   Angelov, M ^a   Germanova, K ^a  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; STATISTICAL METHODS;

FREE CARRIER RECOMBINATION; LINE SHAPE ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034245867     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00208-6     Document Type: Article

References (11)

1. Blood P. In: Morgan DV, Williams RH. editors, Physics and technology of heterostructure devices. Peter Perigrinus London, 1991: 231, (Chapter 7).
2. Sakaki H, Tsuchiya M, Yshino J. Appl Phys Lett 1985;47:295.
3. Colocci M., Gurioli M., Vinattieri A. J Appl Phys. 68:1990;2809.
4. Fujiwara K., Tsukada N., Nakayama T. Appl Phys Lett. 53:1988;675.
5. Christen J, Bimberg D. Phys Rev B 1990; 42: 7213.
6. Chen Y., Cingolani R., Andreani L.C., Bassani F. Il Nuovo Cimento D. 10:1988;847.
7. Ky N.H., Ganiere J.D., Gailhanou M., Morier-Genoud F., Martin D., Reinhart F.K. Phys Rev B. 46:1992;6947.
8. Herman M.A., Bimberg D., Christen J. J Appl Phys. 70:1991;R1.
9. Chomette A., Lambert B., Deveaud B., Clerot F., Regreny A., Bastard G. Europhys Lett. 4:1987;461.
10. Fouquet J.E., Siegman A.E. Appl Phys Lett. 46:1984;280.
11. Oelgart G., Proctor M., Martin D., Morier-Genaud F., Reinhart F.-K., Orschel, Andreani L.C., Rhan H. Phys Rev B. 49:1994;10456.