Molecular beam epitaxy of p-hexaphenyl on GaAs(111)

Surface and Interface Analysis

Volumn 30, Issue 1, 2000, Pages 518-521

  Resel, R ^a,e   Erlacher, K ^a   Muller B ^b,c   Thierry, A ^d   Lotz, B ^d   Kuhlmann, T ^b   Lischka, K ^b   Leising, G ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b UNIVERSITY OF PADERBORN   (Germany)

^c ETH ZURICH   (Switzerland)

^d INSTITUT CHARLES SADRON   (France)

^e GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY CRYSTALLOGRAPHY;

HEXAPHENYL; TRANSMISSION HIGH ENERGY ELECTRON DIFFRACTION;

LUMINOUS MATERIALS;

EID: 0034245331     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200008)30:1<518::AID-SIA718>3.0.CO;2-Q     Document Type: Article

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