Precipitation of Sn in metastable, pseudomorphic Si0.95Sn0.05 films grown by molecular beam epitaxy

Materials Science in Semiconductor Processing

Volumn 3, Issue 4, 2000, Pages 251-255

  Ridder, C ^a   Fanciulli, M ^a   Nylandsted Larsen, A ^a   Weyer, G ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; MOSSBAUER SPECTROSCOPY; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR GROWTH; SOLUBILITY; SUBSTRATES;

CONVERSION ELECTRON MOESSBAUER SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0034240732     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00040-8     Document Type: Article

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