Analyzing the switching behavior of ESD-protection transistors by very fast transmission line pulsing

Journal of Electrostatics

Volumn 49, Issue 3-4, 2000, Pages 111-127

  Wolf, Heinrich ^a   Gieser, Horst ^a   Wilkening, Wolfgang ^b  

^a Fraunhofer Institute Reliability and Microintegration   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

Author keywords

Base transit time; Charged device model (CDM); Compact simulation; Electrostatic discharge; Protection; Very fast transmission line pulser

Indexed keywords

CHARGE COUPLED DEVICES; COMPUTER SIMULATION; ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; FAILURE ANALYSIS; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS; TRANSMISSION LINE THEORY; ELECTRIC EQUIPMENT PROTECTION; ELECTRIC LINES; IONIC CONDUCTION; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; PLASMA APPLICATIONS; SILICON ON INSULATOR TECHNOLOGY; SWITCHING;

BASE TRANSIT TIME; CHARGE DEVICE MODEL; ELECTROSTATIC DISCHARGE; VERY FAST TRANSMISSION LINE PULSING; CORDLESS PHONE CHARGE CONTACTS; EIREV; INTERFEROMETRIC TEMPERATURE MAPPING; ION MOBILITY; PLASMA CHARGING DAMAGE; SMART POWER TECHNOLOGY; TRANSMISSION LINE PULSING;

ELECTROSTATICS;

EID: 0034238637     PISSN: 03043886     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3886(00)00010-3     Document Type: Article

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