Temperature dependence of the photoreflectance lineshape for GaN films grown by molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 381-386

  Behn, U ^a   Thamm, A ^b   Brandt, O ^b   Grahn, H T ^b  

^a University of Applied Sciences Schmalkalden   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; ELECTRIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SENSITIVITY ANALYSIS; SILICON CARBIDE; THERMAL EFFECTS;

EXCITONIC TRANSITIONS; GALLIUM NITRIDE FILMS; GAUSSIAN BROADENED OSCILLATOR; PHOTOREFLECTANCE LINESHAPE; SURFACE ELECTRIC FIELD;

FILM GROWTH;

EID: 0034229287     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<381::AID-PSSA381>3.0.CO;2-R     Document Type: Article

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