Thermo-mechanical finite element analysis in press-packed IGBT design

Microelectronics Reliability

Volumn 40, Issue 7, 2000, Pages 1163-1172

  Pirondi, A ^a   Nicoletto, G ^a   Cova, P ^a   Pasqualetti, M ^b   Portesine, M ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b ANSALDO ENERGIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; ELASTOPLASTICITY; FATIGUE OF MATERIALS; FINITE ELEMENT METHOD; FRETTING CORROSION; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN; STRESS ANALYSIS; STRESS CONCENTRATION; THERMAL CYCLING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0034228125     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00043-3     Document Type: Article

References (8)

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