InP-based 1300 nm microcavity LEDs with 9% quantum efficiency

Electronics Letters

Volumn 36, Issue 15, 2000, Pages 1303-1304

  Depreter, B ^a   Moerman, I ^a   Baets, R ^a   Van Daele, P ^a   Demeester, P ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

MICROCAVITY LIGHT EMITTING DIODES (MCLED);

LIGHT EMITTING DIODES;

EID: 0034227789     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000943     Document Type: Article

References (3)

1. HUNT, N E.J., SCHUBERT, E F , KOPF, R.F., SIVCO, D.L , CHO, A.Y. and ZYDZIK, G J . 'Increased fiber communications bandwidth form a resonant cavity light emitting diode emitting at λ = 940nm', Appl. Phys. Lett., 1993, 63, (19), pp. 2600-2602
2. DE NEVE, H., BLONDELLE, J , VAN DAELE, P , DEMEESTER, P , BAETS R., and BORGHS, G : 'Planar substrate emitting microcavity light emitting diodes with 20% external QE'. Proc. Conf. SPIE Photonics West. 10-14 February 1997, pp. 74-84
3. BENISTY, H., DE NEVE, H., and WEISBUCH, C.: 'Impact of planar microcavity effects on light extraction: I. Basic concepts and analytical trends', IEEE J. Quantum Electron., 1998, 34, pp. 1612-1631