Photoluminescence properties of homoepitaxial InP films grown by remote plasma MOCVD technique

Semiconductor Science and Technology

Volumn 15, Issue 7, 2000, Pages 736-743

  Perna, G ^a   Capozzi, V ^a   Lorusso, G F ^a   Bruno, G ^b   Losurdo, M ^b   Capezzuto, P ^b  

^a UNIVERSITY OF BARI   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON TRANSITIONS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

EPIGROWTH; TRIMETHYLINDIUM;

SEMICONDUCTING FILMS;

EID: 0034227587     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/7/312     Document Type: Article

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