Current-induced joule heating used to crystallize silicon thin films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 7 A, 2000, Pages

  Sameshima, Toshiyuki ^a   Ozaki, Kentaro ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE; COOLING; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC HEATING; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; SEMICONDUCTING SILICON; THIN FILMS;

LASER MELTING;

SEMICONDUCTING FILMS;

EID: 0034227398     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l651     Document Type: Article

References (22)