High-power operation of ZnSe-based cw-laser diodes

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 21-26

  Klude, M ^a   Fehrer, M ^a,b   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; HIGH POWER LASERS; LASER PULSES; LIGHT EMISSION; SEMICONDUCTING ZINC COMPOUNDS; SPECTROMETRY;

HIGH CURRENT INJECTION; THRESHOLD CURRENT; ZINC SELENIDE;

SEMICONDUCTOR LASERS;

EID: 0034226959     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<21::AID-PSSA21>3.0.CO;2-X     Document Type: Article

References (11)

1. B. KATO, H. NOGUCHI, M. NAGAZI, H. OHKUYAMA, S. KIJIMA, and A. ISHIBASHI, Electron. Lett. 34, 282 (1998).
2. M. KLUDE, M. FEHRER, and D. HOMMEL, J. Cryst. Growth, in press (2000).
3. H. WENISCH, M. BEHRINGER, M. FEHRER, M. KLUDE, A. ISEMANN, K. OHKAWA, and D. HOMMEL, Jpn. J. Appl. Phys. 38, 2590 (1999).
4. M. BEHRINGER, K. OHKAWA, V. GROSSMANN, H. HEINKE, K. LEONARDI, M. FEHRER, D. HOMMEL, M. KUTTLER, M. STRASSBURG, and D. BIMBERG, J. Cryst. Growth 184/185, 580 (1998).
5. S. GUHA, J. M. DEPUYDT, M. A. HAASE, J. QIU, and H. CHENG, Appl. Phys. Lett. 63, 3107 (1993).
6. S. ITOH, Ninth Internat. Conf. II-VI Compounds, Kyoto, Japan, 1999.
7. T. SEEDORF, K. LEONARDI, D. HOMMEL, M. CORNELISSEN, H. SELKE, and P. L. RYDER, J. Cryst. Growth, in press (2000).
8. U. LUNZ, J. KUHN, F. GOSCHENHOFER, U. SCHÜSSLER, S. EINFELDT, C. R. BECKE, and G. LANDWEHR, J. Appl. Phys. 80, 6861 (1996).
9. A. ISEMANN, M. BEHRINGER, H. WENISCH, M. FEHRER, K. OHKAWA, and D. HOMMEL, Acta Phys. Polon. A 94, 355 (1998).
10. C. H. HENRY, P. M. PETROFF, R. A. LOGAN, and F. R. MERRITT, J. Appl. Phys. 50, 3721 (1979).
11. P. W. EPPERLEIN, P. BUCHMANN, and A. JAKUBOWICZ, Appl. Phys. Lett. 62, 455 (1993).