Oxidation of Si(001) surfaces studied by high-resolution rutherford backscattering spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4481-4482

  Nakajima, Kaoru ^a   Okazaki, Yasutaka ^a   Kimura, Kenji ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

High resolution RBS; Oxygen coverage; Oxygen depth profile; Si(001); Silicon oxidation

Indexed keywords

DEPTH PERCEPTION; OPTICAL RESOLVING POWER; OXIDATION; PARTIAL PRESSURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ATOMIC LEVEL; DEPTH RESOLUTION; FEASIBILITY; OXYGEN COVERAGE; OXYGEN DEPTH PROFILING; SILICON SURFACES;

SILICON;

EID: 0034226937     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4481     Document Type: Article

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