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Volumn 39, Issue 7 B, 2000, Pages 4427-4431

Hydrogen effect on damage structure of Si(100) surface studied by in Situ raman spectroscopy

Author keywords

Damaging mechanism; Defect formation; Hydrogen effect; Ion irradiation; Raman spectroscopy; Silicon

Indexed keywords

AMORPHIZATION; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; HYDROGEN; ION IMPLANTATION; IRRADIATION; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING;

EID: 0034224503     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4427     Document Type: Article
Times cited : (3)

References (25)
  • 19
    • 33645043105 scopus 로고
    • ed. R. A. B. Devine Plenum, New York
    • 2, ed. R. A. B. Devine (Plenum, New York, 1988) p. 63.
    • (1988) 2 , pp. 63
    • McMillan, P.1
  • 23
    • 33645044029 scopus 로고    scopus 로고
    • in preparation for publication
    • S. Muto: in preparation for publication.
    • Muto, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.