III-nitride unipolar light emitting devices

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 307-313

  Shreter, Y G ^a   Rebane, Y T ^a   Wang, W N ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; BAND STRUCTURE; ELECTRON TRANSITIONS; INFRARED RADIATION; PHONONS; QUANTUM EFFICIENCY; RADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM NITRIDE; DEEP SUBBAND; INDIUM NITRIDE; QUANTUM STATES; SHALLOW SUBBAND; UNIPOLAR LIGHT EMITTING DEVICES;

LIGHT EMITTING DIODES;

EID: 0034224333     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<307::AID-PSSA307>3.0.CO;2-Z     Document Type: Article

References (5)

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