Evolution of integrated-circuit vacuum processes: 1959-1975

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4, 2000, Pages 1736-1745

  Waits, Robert K ^a  

^a NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL GROWTH FROM MELT; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; METALLIZING; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; SPUTTER DEPOSITION; TECHNOLOGY TRANSFER;

THIN-FILM TECHNOLOGY;

VACUUM TECHNOLOGY;

EID: 0034224318     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582416     Document Type: Article

References (112)

1. G. E. Moore, in Microelectronics, edited by E. Keonjian (McGraw-Hill, New York, 1963), Chap. 5, p. 266.
2. J. S. Kilby, U.S. Patent No. 3,138,743 (1964); J. S. Kilby, U.S. Patent No. 3,138,744 (1964).
3. J. S. Kilby, U.S. Patent No. 3,138,743 (1964); J. S. Kilby, U.S. Patent No. 3,138,744 (1964).
4. R. N. Noyce, U.S. Patent No. 2,981,877 (1961).
5. J. A. Hoerni, U.S. Patent No. 3,025,589 (1962).
6. S. Dushman, Scientific Foundations of Vacuum Technology (Wiley, New York, 1949); A. Guthrie and R. K. Wakerling, Vacuum Equipment and Techniques (McGraw-Hill, New York, 1949).
7. S. Dushman, Scientific Foundations of Vacuum Technology (Wiley, New York, 1949); A. Guthrie and R. K. Wakerling, Vacuum Equipment and Techniques (McGraw-Hill, New York, 1949).
8. L. Holland, Vacuum Deposition of Thin Films (Wiley, New York, 1956).
9. H. W. Schleuning, J. Vac. Sci. Technol. 10, 833 (1973).
10. Transactions of the AVS National Symposia - 1956-1960 (Pergamon, New York); Transactions of the AVS National Symposia - 1961-1963 (Macmillan, New York); First issue of J. Vac. Sci. Technol. 1, (1964).
11. Transactions of the AVS National Symposia - 1956-1960 (Pergamon, New York); Transactions of the AVS National Symposia - 1961-1963 (Macmillan, New York); First issue of J. Vac. Sci. Technol. 1, (1964).
12. Transactions of the AVS National Symposia - 1956-1960 (Pergamon, New York); Transactions of the AVS National Symposia - 1961-1963 (Macmillan, New York); First issue of J. Vac. Sci. Technol. 1, (1964).
13. J. Strong et al., Procedures in Experimental Physics (Prentice-Hall, Englewood Cliffs, NJ, 1938); Reprinted by Lindsay Publications, Bradley, IL.
14. A. R. Huntress, A. L. Smith, B. D. Power, and N. T. M. Dennis, 4th National Vacuum Symposium Transactions (Pergamon, New York, 1957), p. 104.
15. Silicon Valley Genealogy Chart - 1947-1986 (Semiconductor Equipment and Material International, Mountain View, CA, 1987).
16. S. Dushman, Scientific Foundations of Vacuum Technology, 2nd ed. edited by J. M. Lafferty (Wiley, New York, 1962).
17. A. Guthrie, Vacuum Technology (Wiley, New York, 1963).
18. L. Holland, Vacuum Deposition of Thin Films (Chapman and Hall, London, 1963).
19. Thin Film Microelectronics, edited by L. Holland (Wiley, New York, 1965).
20. R. W. Berry, P. M. Hall, and M. T. Harris, Thin Film Technology (Van Nostrand, Princeton, 1968).
21. Handbook of Thin Film Technology, edited by L. I. Maissel and R. Glang (McGraw-Hill, New York, 1970).
22. D. J. Crawley, E. D. Tolmie, and A. R. Huntress, 9th National Vacuum Symposium Transactions (Macmillan, New York, 1962), p. 339.
23. M. H. Hablanian and J. C. Maliakal, J. Vac. Sci. Technol. 10, 58 (1973).
24. L. D. Hall, Rev. Sci. Instrum. 29, 367 (1958); L. D. Hall, J. C. Helmer, and R. L. Jepson, U.S. Patent No. 2,993,638 (1961).
25. L. D. Hall, Rev. Sci. Instrum. 29, 367 (1958); L. D. Hall, J. C. Helmer, and R. L. Jepson, U.S. Patent No. 2,993,638 (1961).
26. J. F. O'Hanlon, A User's Guide to Vacuum Technology, 2nd ed. (Wiley-Interscience, New York, 1989), pp. 247-248.
27. Y. Sosniak, in Transactions of the 12th AVS Vacuum Symposium (Macmillan, New York, 1965); G. Stern and H. L. Caswell, J. Vac. Sci. Technol. 10, 284 (1967).
28. Y. Sosniak, in Transactions of the 12th AVS Vacuum Symposium (Macmillan, New York, 1965); G. Stern and H. L. Caswell, J. Vac. Sci. Technol. 10, 284 (1967).
29. J. J. Sullivan, J. Vac. Sci. Technol. A 3, 1721 (1985).
30. T. H. DiStefano and J. E. Lewis, J. Vac. Sci. Technol. 11, 1020 (1974).
31. L. Holland, Vacuum Deposition of Thin Films (Wiley, New York, 1956), pp. 135-140.
32. A. Guthrie, Vacuum Technology (Wiley, New York, 1963), pp. 144 and 147; British Patent No. 754,102 (1951).
33. D. E. Meyer, Trans. Metall. Soc. AIME 245, 593 (1969).
34. D. H. Blackburn et al., Rev. Sci. Instrum. 36, 901 (1965); C. W. Hanks, U.S. Patent No. 3,535,428 (1970).
35. D. H. Blackburn et al., Rev. Sci. Instrum. 36, 901 (1965); C. W. Hanks, U.S. Patent No. 3,535,428 (1970).
36. G. W. McDonough, D. S. Schatz, and E. R. Anderson, U.S. Patent No. 3,935,412 (1976).
37. G. O. B. Mahl, Res. Dev. 21, 46 (May 1970); G. O. B. Mahl, U.S. Patent No. 3,643,625 (1972).
38. G. O. B. Mahl, Res. Dev. 21, 46 (May 1970); G. O. B. Mahl, U.S. Patent No. 3,643,625 (1972).
39. R. L. Shrader, U.S. Patent No. 3,583,363 (1971).
40. K. H. Behrndt and R. W. Love, Transactions of the 7th AVS National Vacuum Symposium (Pergamon, New York, 1960), p. 87; S. J. Lins and H. S. Kukuk, Transactions of the 7th AVS National Vacuum Symposium (Pergamon, New York, 1960), p. 333.
41. K. H. Behrndt and R. W. Love, Transactions of the 7th AVS National Vacuum Symposium (Pergamon, New York, 1960), p. 87; S. J. Lins and H. S. Kukuk, Transactions of the 7th AVS National Vacuum Symposium (Pergamon, New York, 1960), p. 333.
42. R. W. Berry and D. J. Sloan, Proceedings of the 4th National Convention on Military Electronics (IEEE, New York, 1960), p. 214.
43. S. S. Charschan and H. Westgard, Electrochem. Technol. 2, 5 (1964); West. Electr. Eng. 7(2), 9 (1963).
44. S. S. Charschan and H. Westgard, Electrochem. Technol. 2, 5 (1964); West. Electr. Eng. 7(2), 9 (1963).
45. A. M. Hanfmann, H. Y. Kumagi, and I. M. Reicher, J. Vac. Sci. Technol. 10, 111 (1973); C. H. George, ibid. 10, 393 (1973).
46. A. M. Hanfmann, H. Y. Kumagi, and I. M. Reicher, J. Vac. Sci. Technol. 10, 111 (1973); C. H. George, ibid. 10, 393 (1973).
47. I. Blech, H. Sello, and L. V. Gregor, in Thin Film Microelectronics, edited by L. Holland (Wiley, New York. 1970), Chap. 23.
48. G. K. Wehner, Adv. Electron. Electron Phys. 7, 239 (1955).
49. G. S. Anderson, W. N. Mayer, and G. K. Wehner, J. Appl. Phys. 33, 2991 (1962); G. S. Anderson and R. M. Moseson, U.S. Patent No. 3,233,137 (1966).
50. G. S. Anderson, W. N. Mayer, and G. K. Wehner, J. Appl. Phys. 33, 2991 (1962); G. S. Anderson and R. M. Moseson, U.S. Patent No. 3,233,137 (1966).
51. P. D. Davidse and L. I. Maissel, J. Appl. Phys. 37, 574 (1966); P. D. Davidse, SCP and Solid State Technol. 9(12), 30 (Dec. 1966); Vacuum 17, 139 (1967).
52. P. D. Davidse and L. I. Maissel, J. Appl. Phys. 37, 574 (1966); P. D. Davidse, SCP and Solid State Technol. 9(12), 30 (Dec. 1966); Vacuum 17, 139 (1967).
53. P. D. Davidse and L. I. Maissel, J. Appl. Phys. 37, 574 (1966); P. D. Davidse, SCP and Solid State Technol. 9(12), 30 (Dec. 1966); Vacuum 17, 139 (1967).
54. B. L. Crowder, J. Vac. Sci. Technol. 8, S71 (1971); For a later review, see, J. H. Freeman, Radiat. Eff. 100, 161 (1986).
55. B. L. Crowder, J. Vac. Sci. Technol. 8, S71 (1971); For a later review, see, J. H. Freeman, Radiat. Eff. 100, 161 (1986).
56. J. W. Mayer, L. Eriksson, and J. A. Davies, Ion Implantation in Semiconductors (Academic, New York, 1970).
57. S. M. Irving, Proceedings of the Kodak Interface Conference (Eastman Kodak Co., Rochester, NY, 1968), Vol. II, pp. 26-29.
58. J. R. Hollahan, J. Chem. Educ. 43, A401 (1966).
59. R. Bersin, U.S. Patent No. 3,410,776 (1968).
60. S. M. Irving and K. E. Lemons, U.S. Patent No. 3,837,856 (1974).
61. S. M. Irving, Tegal Corp. 1st Annual "Thinker" Award address (1980) (unpublished).
62. S. M. Irving, K. E. Lemons, and G. E. Bobos, U.S. Patent No. 3,615,956 (1971).
63. M. H. Hablanian and J. C. Maliakal. J. Vac. Sci. Technol. 10, 58 (1973).
64. A history of the development of cryopumping technology can be found in K. M. Welch, Capture Pumping Technology: An Introduction (Pergamon, New York, 1991), Sec. 5.5.
65. C. L. Standley, R. E. Jones, and L. I. Maissel, Thin Solid Films 5, 355 (1970).
66. I. A. Blech, J. F. Campbell, Jr., and W. H. Shepherd, Proceedings of the 8th Annual IEEE Reliability Physics Sympos. (IEEE, New York, 1970), pp. 144-157; I. A. Blech. Thin Solid Films 6, 113 (1970); ibid. 13, 117 (1972).
67. I. A. Blech, J. F. Campbell, Jr., and W. H. Shepherd, Proceedings of the 8th Annual IEEE Reliability Physics Sympos. (IEEE, New York, 1970), pp. 144-157; I. A. Blech. Thin Solid Films 6, 113 (1970); ibid. 13, 117 (1972).
68. I. A. Blech, J. F. Campbell, Jr., and W. H. Shepherd, Proceedings of the 8th Annual IEEE Reliability Physics Sympos. (IEEE, New York, 1970), pp. 144-157; I. A. Blech. Thin Solid Films 6, 113 (1970); ibid. 13, 117 (1972).
69. C. W. Oatley, J. Appl. Phys. 53, R1 (1982).
70. J. B. Bindell and T. C. Tisone, Thin Solid Films 23, 31 (1974); T. C. Tisone and J. B. Bindell, J. Vac. Sci. Technol. 11, 72 (1974).
71. J. B. Bindell and T. C. Tisone, Thin Solid Films 23, 31 (1974); T. C. Tisone and J. B. Bindell, J. Vac. Sci. Technol. 11, 72 (1974).
72. T. Yanagawa and I. Takekoshi, IEEE Trans. Electron Devices 17, 964 (1970).
73. J. L. Vossen and J. J. O'Neill, Jr., RCA Rev. 31, 276 (1970).
74. I. A. Blech and H. Sello, "A Study of Failure Mechanisms in Silicon Planar Epitaxial Transistors," Technical Report No. TR-66-36, Rome Air Force Base, NY (1965), pp. 58-61; I. A. Blech and E. S. Meieran, Appl. Phys. Lett. 11, 263 (1967); J. Appl. Phys. 40, 485 (1969).
75. I. A. Blech and H. Sello, "A Study of Failure Mechanisms in Silicon Planar Epitaxial Transistors," Technical Report No. TR-66-36, Rome Air Force Base, NY (1965), pp. 58-61; I. A. Blech and E. S. Meieran, Appl. Phys. Lett. 11, 263 (1967); J. Appl. Phys. 40, 485 (1969).
76. I. A. Blech and H. Sello, "A Study of Failure Mechanisms in Silicon Planar Epitaxial Transistors," Technical Report No. TR-66-36, Rome Air Force Base, NY (1965), pp. 58-61; I. A. Blech and E. S. Meieran, Appl. Phys. Lett. 11, 263 (1967); J. Appl. Phys. 40, 485 (1969).
77. I. Ames, F. M. d'Heurle, and R. E. Horstmann, IBM J. Res. Dev. 14, 461 (1970).
78. P. A. Totta and R. P. Sopher, IBM J. Res. Dev. 13, 226 (1969).
79. Anon., Circuits Manufacturing 65 (April 1973).
80. A. J. Learn, Thin Solid Films 20, 261 (1974).
81. G. O. B. Mahl, U.S. Patent No. 3,970,820 (1976).
82. E. H. Blevis, "Single Crucible Evaporation of Al/Si and Al/Cu Films," Technical Report No. 10 (Applied Materials, 1976) (unpublished).
83. P. J. Clarke, U.S. Patent No. 3,616,450 (1971).
84. P. J. Clarke, U.S. Patent No. 3,711,39 (1973).
85. F. M. Penning, U.S. Patent No. 2,146,025 (1939).
86. V. Hoffman, Solid State Technol. 19, 57 (1976); 19, 66 (1976).
87. V. Hoffman, Solid State Technol. 19, 57 (1976); 19, 66 (1976).
88. J. S. Chapin, Res./Dev. 25, 37 (Jan. 1974); 25, 40 (1974); U.S. Patent No. 4,166,018 (1979).
89. J. S. Chapin, Res./Dev. 25, 37 (Jan. 1974); 25, 40 (1974); U.S. Patent No. 4,166,018 (1979).
90. A. J. Learn, J. Electrochem. Soc. 123, 894 (1976).
91. J. L. Chruma and P. G. Hilton, U.S. Patent No. 3,900,597 (1975).
92. D. L. Burt, R. F. Taraci, and J. E. Zavion, U.S. Patent No. 3,934,060 (1976).
93. W. Kern and R. Rosler, J. Vac. Sci. Technol. 14, 1082 (1977).
94. In 1980 LPCVD tungsten metallization was used by Hewlett-Packard (Ft. Collins, CO) in an 18 MHz 32-bit microprocessor (Paper Nos. 9.1 and 9.2, International Solid State Circuits Conference, February, 1981).
95. A. R. Reinberg, U.S. Patent No. 3,757,733 (1973).
96. R. S. Rosler, W. C. Benzing, and J. Baldo, Solid State Technol. 19, 45 (June 1976).
97. E. G. Spencer and P. H. Schmidt, J. Vac. Sci. Technol. 8, S52 (1971).
98. M. Cantagrel and M. Marchal, J. Mater. Sci. 8, 1711 (1973).
99. For example, A. Jacob, U.S. Patent No. 3,795,557 (1974).
100. H. Abe, U.S. Patent No. 3,880,684 (1975).
101. S. Y. Muto, U.S. Patent No. 3,971,684 (1976).
102. H. W. Lehmann, J. Vac. Sci. Technol. B 6, 1881 (1988); H. W. Lehmann, L. Krausbauer, and R. Widmer, J. Vac. Sci. Technol. 14, 281 (1977).
103. H. W. Lehmann, J. Vac. Sci. Technol. B 6, 1881 (1988); H. W. Lehmann, L. Krausbauer, and R. Widmer, J. Vac. Sci. Technol. 14, 281 (1977).
104. A. R. Reinberg, in Etching for Pattern Definition, edited by H. G. Hughes and M. J. Rand (Electrochemical Society, Princeton, NJ, 1976), pp. 91-110.
105. R. G. Poulsen, J. Vac. Sci. Technol. 14, 266 (1977).
106. H. S. Rupprecht, J. Vac. Sci. Technol. 13, 27 (1976).
107. P. H. Rose, Solid State Technol. 40, 129 (May 1997).
108. R. K. Waits, Proc. IEEE 59, 1425 (1971).
109. C. A. Bittman, G. H. Wilson, R. J Whittier, and R. K. Waits, IEEE J. Solid-State Circuits SC-5, 29 (1970).
110. K. R. Stafford and D. W. Oberlin, Solid State Technol. 13, 67 (May 1970).
111. G. E. Moore, in Microelectronics, edited by E. Keonjian (McGraw-Hill, New York, 1963), pp. 344 and 357.
112. T. R. Finch, J. Vac. Sci. Technol. 9, 1135 (1972).