Thermally induced strain in ZnSe and GaN epitaxial layers studied by high-resolution X-ray diffraction at variable temperatures

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 189-194

  Heinke, H ^a   Haase, L ^a   Grossmann, V ^a   Kirchner, V ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; FILM GROWTH; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; THERMAL EFFECTS; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

BIAXIAL COMPRESSIVE STRAIN; BIAXIAL TENSILE STRAIN; GALLIUM NITRIDE EPITAXIAL LAYERS; LATTICE MISMATCH; STRAIN STATE; THERMALLY INDUCED STRAIN; ZINC SELENIDE EPITAXIAL LAYERS;

SEMICONDUCTING FILMS;

EID: 0034224225     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<189::AID-PSSA189>3.0.CO;2-3     Document Type: Article

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