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Volumn 23, Issue 8, 2000, Pages
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Detecting non-visual defects is vital for 0.18 μm
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECT DENSITY MEASUREMENT;
GATE INDUCED DRAIN LEAKAGE;
NONVISUAL DEFECT DETECTION;
TEMPERATURE COEFFICIENT OF RESISTANCE;
YIELD LOSS;
CORRELATION METHODS;
CURRENT DENSITY;
DEFECTS;
DIELECTRIC MATERIALS;
ELECTRIC POTENTIAL;
ELECTRIC RESISTANCE MEASUREMENT;
ELECTRON TUNNELING;
EXTRAPOLATION;
GATES (TRANSISTOR);
INTERFACES (MATERIALS);
LEAKAGE CURRENTS;
YIELD STRESS;
SEMICONDUCTOR DEVICE TESTING;
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EID: 0034224135
PISSN: 01633767
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (2)
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References (0)
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