Improvement of EDM efficiency of silicon single crystal through ohmic contact

Precision Engineering

Volumn 24, Issue 3, 2000, Pages 185-190

  Kunieda, Masanori ^a   Ojima, Satoyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD ALLOYS; INTERFACES (MATERIALS); OHMIC CONTACTS; SILICON WAFERS; SINGLE CRYSTALS;

ELECTRICAL DISCHARGE MACHINING (EDM);

MACHINING;

EID: 0034223692     PISSN: 01416359     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0141-6359(99)00041-0     Document Type: Article

References (6)

1. Uno Y., Kubota S., Yokomizo S., Okada A., Tanaka H. Study on fine boring of single crystalline silicon by EDM. J JSEME. 30:(65):1996;9.
2. Kawada K., Masaki K., Sato T., Masuzawa T. Study on micro-EDM (3rd Rept). J JSEME. 28:(59):1994;1.
3. Luo Y.F., Chen C.G., Tong Z.F. Slicing thin silicon wafers by wire EDM cutting. Proc ISEM. 10:1992;287.
4. Einspruch N.G. VLSI Electronics, Microstructure Science. 1987;81 Academic Press, San Diego.
5. Gibbons J.F. Semiconductor Electronics. N. 1996;170 McGraw-Hill, New York.
6. Sze S.M. Semiconductor Devices, Physics, and Technology. 1985;169 John Wiley & Sons, New York.