Stoichiometry study of S-terminated GaAs(001)-(2 × 6) surface with synchrotron radiation photoelcctron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3943-3946

  Shimoda, Masahiko ^a   Tsukamoto, Shiro ^a   Ohno, Takahisa ^a   Koguchi, Nobuyuki ^a   Sugiyama, Munehiro ^b,c   Maeyama, Satoshi ^a,d   Watanabe, Yoshio ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c GUNMA UNIVERSITY   (Japan)

^d KOCHI WOMEN S UNIVERSITY   (Japan)

Author keywords

Adatoms; Gallium arsenide; Sulfur; Surface structure; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

DIMERS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PHOTONS; STOICHIOMETRY; SUBSTRATES; SULFUR; SURFACE STRUCTURE; THERMAL EFFECTS;

ADATOMS; PHOTOEMISSION SPECTRA; PHOTON ENERGY; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034216164     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3943     Document Type: Article

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