Triple-exposure method for fabricating triangular-lattice photonic crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 4236-4240

  Tokushima, Masatoshi ^a   Kosaka, Hideo ^a   Tomita, Akihisa ^a   Yamada, Hirohito ^a  

^a NEC CORPORATION   (Japan)

Author keywords

I line; Lithography; Photonic bandgap; Photonic crystal; Triangular lattice; Triple exposure; Waveguide

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; MASKS; PHOTOLITHOGRAPHY; SILICON WAFERS; WAVEGUIDES;

PHOTONIC BANDGAP; PHOTONIC CRYSTAL; TRIANGULAR LATTICE; TRIPLE EXPOSURE;

OPTICAL MATERIALS;

EID: 0034215833     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4236     Document Type: Article

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14. These L/S-pattern pitches were the ones in the projected plane and they were the lattice pitches multiplied by √3/2. The corresponding pitches of the L/S patterns in the photomasks were five times these pitches because of the magnification (five) of the stepper used.
15. In TE polarization, the magnetic field is parallel to the air columns of the lattice; and in TM polarization, the electric field is parallel to the air columns.