SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3915-3918

Molybdenum film technology for power metal oxide semiconductor field effect transistor gate electrode applications

(6) Liu, Ying Kun a,b Liang, Chun Guang b Wang, Zhan Li b He, Yu Zhang b Lang, Xiu Lan b Zhou, Ming Hui b

a LANZHOU UNIVERSITY (China)

b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE (China)

Author keywords

Mo film; MOS gate; Power VDMOSFET; Reliability; Stability

Indexed keywords

ELECTRODES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOLYBDENUM; RELIABILITY; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SUBSTRATES; THERMAL EFFECTS; THRESHOLD VOLTAGE;

DRAIN EFFICIENCY; GATE ELECTRODE; MOLYBDENUM FILM TECHNOLOGY; POWER GRAIN; SUBSTRATE TEMPERATURE; VERTICAL DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0034215579 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.3915 Document Type: Article

Times cited : (7)

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