SiO2 and Si etching in fluorocarbon plasmas: coupling of a surface model with a profile evolution simulator

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 395-398

  Kokkoris, G ^a,b   Gogolides, E ^a   Boudouvis, A G ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FLUOROCARBONS; FREE RADICALS; PLASMA SIMULATION; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICA;

FLUOROCARBON PLASMAS; ION ENERGY; PROFILE EVOLUTION SIMULATOR; RADICAL CONCENTRATION;

ETCHING;

EID: 0034206377     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00341-5     Document Type: Article

References (6)

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6. 6. O. Joubert, G.S. Oehrlein, Y. Zhang, J. Vac. Sci. Technol. A, 12, 658 (1994).