Characterization of GaS-deposited CVD diamond films by AES and XPS

Applied Surface Science

Volumn 159, Issue , 2000, Pages 588-593

  Islam, A B M O ^a   Nishiyama, Y ^a   Tambo, T ^a   Tatsuyama, C ^a   Ito, T ^b  

^a UNIVERSITY OF TOYAMA   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIAMOND FILMS; EVAPORATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY EMISSION; SEMICONDUCTING BORON; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

POSITIVE ELECTRON AFFINITY (PEA);

SEMICONDUCTING FILMS;

EID: 0034206105     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00066-0     Document Type: Article

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