Etch characteristics of giant magnetoresistive materials

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 367-370

  Resnick, D J ^a   Pendharkar, S ^a   Kyler, K ^a   Kerszykowski, G ^a   Clemens, S ^a   Tompkins, H ^a   Durlam, M ^a   Tehrani, S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER CORROSION; INTERFEROMETERS; MAGNETIC FIELDS; MAGNETORESISTANCE; PLASMA ETCHING; RANDOM ACCESS STORAGE; TEMPERATURE CONTROL; THIN FILMS;

CHLORINE ARGON GAS MIXTURE; GIANT MAGNETORESISTIVE MATERIALS; MAGNETORESISTIVE RANDOM ACCESS MEMORY;

MAGNETIC FILMS;

EID: 0034206057     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00335-X     Document Type: Article

References (8)

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