Fabrication and characterization of vacuum nanoelectronic devices

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 179-182

  Driskill Smith, A A G ^a   Hasko, D G ^a   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CHARACTERIZATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIELD EMISSION CATHODES; GATES (TRANSISTOR); NANOTECHNOLOGY; SEMICONDUCTOR JUNCTIONS; TRIODES; TUNGSTEN; VACUUM TECHNOLOGY;

ENCAPSULATED VACUUM NANOTRIODE; FIELD EMITTED CURRENTS; GATE ELECTRODE; TUNGSTEN NANOPILLARS; TURN-ON GATE VOLTAGE; VACUUM NANOELECTRIC DEVICES;

ELECTRON TUBE MANUFACTURE;

EID: 0034206055     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00291-4     Document Type: Article

References (4)

1. 1. A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, J. Vac. Sci. Technol. B 15, 2773 (1997).
2. 2. A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, Appl. Phys. Lett. 71, 3159 (1997).
3. 3. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B 11, 2519 (1993).
4. 4. A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, accepted for publication in Appl. Phys. Lett. 75, (1999).