Defects and their movement in Pb and Ge nanocrystals characterized by ultra-high vacuum high resolution transmission electron microscope

Applied Surface Science

Volumn 159, Issue , 2000, Pages 486-491

  Wu, Yuan ^a   Takeguchi, Masaki ^a   Chen, Qing ^a   Furuya, Kazuo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HIGH RESOLUTION ELECTRON MICROSCOPY; LEAD; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

FRANK PARTIAL DISLOCATIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); TWIN BOUNDARIES;

SEMICONDUCTING SILICON;

EID: 0034205902     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00059-3     Document Type: Article

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