Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 6 B, 2000, Pages

  Arai, Masakazu ^a   Nishiyama, Nobuhiko ^a   Shinada, Satoshi ^a   Matsutani, Akihiro ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LASER MODES; LIGHT POLARIZATION; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034205745     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l588     Document Type: Article

References (18)