Fabrication of surface acoustic wave-semiconductor coupled devices using epitaxial lift-off technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3666-3671

  Hong, Chulun ^a   Koh, Keishin ^a   Kaneshiro, Chinami ^a   Aoki, Yusuke ^a   Hohkawa, Kohji ^a  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Compound semiconductor; Epitaxial lift off; Film bonding; LiNbO3; Selective etching; Surface acoustic wave semiconductor coupled device; Van der Waals force

Indexed keywords

BONDING; EPITAXIAL GROWTH; ETCHING; LITHIUM NIOBATE; PIEZOELECTRIC MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; STRESS ANALYSIS; THIN FILMS; VAN DER WAALS FORCES;

EPITAXIAL LIFT-OFF (ELO) TECHNOLOGY;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0034205720     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3666     Document Type: Article

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