Thermal distortion predictions of a silicon wafer during exposure in a scalpel tool

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 357-360

  Gianoulakis, S ^a   Liddle, J ^b   Stanton, S ^b   Gallatin, G ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CARRIER CONCENTRATION; COMPUTER SIMULATION; COMPUTER SOFTWARE; FINITE ELEMENT METHOD; HEAT FLUX; MASKS; PHOTOLITHOGRAPHY; SILICON WAFERS; THERMAL EXPANSION;

POST OPTICAL LITHOGRAPHY; PROJECTION ELECTRON LITHOGRAPHY SYSTEM; THERMAL DISTORTION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034205192     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00333-6     Document Type: Article

References (3)

1. 1. S. D. Berger and J. M. Gibson, "New approach to projection-electron lithography with demonstrated 0.1 micron linewidth", Appl. Phys. Lett. 57, 153 (1990)
2. 2. D. K. Gartling, R. E. Hogan, and M. W. Glass, "COYOTE - A finite element computer program for nonlinear heat conduction problems", SAND94-1179
3. 3. M. L. Blanford, "JAS3D A multi-strategy iterative code for solid mechanics analysis version 1.6", SAND87-1305.