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Volumn 159, Issue , 2000, Pages 387-391

Molecular dynamics analysis of point defects in silicon near solid-liquid interface

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; CRYSTAL GROWTH; DIFFUSION; HEAT TRANSFER; MASS TRANSFER; MOLECULAR DYNAMICS; PHASE INTERFACES; POINT DEFECTS; PRESSURE EFFECTS; SINGLE CRYSTALS;

EID: 0034205183     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00121-5     Document Type: Article
Times cited : (3)

References (20)
  • 8
    • 0343828957 scopus 로고
    • Defects and properties of semiconductors
    • KTK Scientific
    • Wada K., Inoue N. Defects and properties of semiconductors. Defect Engineering. 1985;169 KTK Scientific.
    • (1985) Defect Engineering , pp. 169
    • Wada, K.1    Inoue, N.2
  • 12
    • 0003746504 scopus 로고
    • H.R. Huff, R.K. Kriegler, & Y. Takeishi. Pennnington: Electrochem. Soc
    • Abe T., Kikuchi K., Shirai S., Muraoka S. Huff H.R., Kriegler R.K., Takeishi Y. Semiconductor Silicon. 1981;54 Electrochem. Soc, Pennnington.
    • (1981) Semiconductor Silicon , pp. 54
    • Abe, T.1    Kikuchi, K.2    Shirai, S.3    Muraoka, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.