Arrays of field emission cathode structures with sub-300 nm gates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1212-1215

  Bernhardt, A F ^a   Contolini, R J ^a,c   Jankowski, A F ^a   Liberman, V ^a,d   Morse, J D ^a   Musket, R G ^a   Barton, R ^b   Macaulay, J ^b   Spindt, C ^b  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b Candescent Technologies Corporation   (United States)

^c Novellus Systems   (United States)

^d MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CONDUCTIVE PLASTICS; CURRENT DENSITY; IMAGE ANALYSIS; IMAGE QUALITY; ION BEAM LITHOGRAPHY; IRRADIATION; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCARBONATES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

ION TRACKING LITHOGRAPHY; SPINDT PROCESS;

FIELD EMISSION CATHODES;

EID: 0034188068     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591363     Document Type: Article

References (11)

1. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976).
2. C. A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, J. Vac. Sci. Technol. B 14, 1986 (1996).
3. C. O. Bozler, C. T. Harris, S. Rabe, D. D. Rathman, and M. A. Hollis, J. Vac. Sci. Technol. B 12, 629 (1994).
4. A. F. Jankowski, J. P. Hayes, R. G. Musket, F. Cosandey, C. E. Gorla, R. S. Besser, V. Westerlind, and G. Cobai, in Chemistry and Physics of Nanostructures and Related Non-Equilibrium Materials, edited by E. Ma, B. Fultz, J. Morral, and P. Nash (The Minerals, Metals and Materials Society, 1997), p. 211.
5. B. E. Fischer and R. Spohr, Rev. Mod. Phys. 55, 907 (1983).
6. R. Spohr, Ion Tracks and Microtechnology (Vieweg, Braunschweig, 1990).
7. R. P. Henke, E. V. Benton, and H. H. Heckman, Radiat. Eff. 3, 43 (1970).
8. W. de Sorbo, Nucl. Tracks Radiat. Meas. 3, 13 (1979).
9. C. A. Spindt, J. Appl. Phys. 39, 3504 (1968); similar structures, produced by sputtering instead of evaporation, are described in A. F. Jankowski and J. P. Hayes, Mater. Res. Soc. Symp. Proc. 471, 237 (1997).
10. C. A. Spindt, J. Appl. Phys. 39, 3504 (1968); similar structures, produced by sputtering instead of evaporation, are described in A. F. Jankowski and J. P. Hayes, Mater. Res. Soc. Symp. Proc. 471, 237 (1997).
11. See, for example, C. G. Lee, H. Y. Ahn, B. G. Park, and J. D. Lee, J. Vac. Sci. Technol. B 14, 1966 (1996) for an explicit comparison of gate turn-on voltage at varying gate diameters.