SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 27, Issue 5, 2000, Pages 447-452

Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs:Si

(6) Chevallier, J a Barbe M a Constant, M b Loridant Bernard, D c Constant, E c Silvestre, S c

a Centre National de la Recherche Scientifique (France)

b UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE (France)

c INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DISSOCIATION; ELECTRIC CONDUCTIVITY; HALL EFFECT; HYDROGEN; PASSIVATION; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL DIFFUSION; ULTRAVIOLET RADIATION;

DOPANT REACTIVATION; ELECTRON EXCITATION; ISOTOPE EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034187825 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.2000.0887 Document Type: Article

Times cited : (5)

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