Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1684-1687

  Kobayashi, M ^a,c   Kitamura, K ^a   Umeya, H ^a   Jia, A W ^a   Yoshikawa, A ^a   Shimotomai, M ^a   Kato, Y ^a   Takahashi, K ^a,b  

^a CHIBA UNIVERSITY   (Japan)

^b TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; WETTING;

CADMIUM SULFIDE; SELF-ORGANIZED QUANTUM DOTS; ZINC SELENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034187782     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591452     Document Type: Article

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