Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1435-1438

  Beaudoin, M ^a,b   Grassi, E ^a   Johnson, S R ^a   Ramaswamy, K ^a   Tsakalis, K ^a   Alford, T L ^a   Zhang, Y H ^a  

^a Arizona State University   (United States)

^b Bandwidth9 Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; DATABASE SYSTEMS; ELLIPSOMETRY; ENERGY GAP; FILM GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TRANSFER FUNCTIONS; X RAY DIFFRACTION ANALYSIS;

COMPOSITION CONTROL; HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); OPTICAL CONSTANT (OC) DATABASE; SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING FILMS;

EID: 0034187724     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591398     Document Type: Article

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