Molecular beam epitaxial growth of vertical cavity surface emitting lasers with digital alloys and digital gradings

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1619-1622

  Newman, P G ^a   Pamulapati, J ^a   Shen, H ^a   Taysing Lara, M ^a   Liu, J ^a   Chang, W ^a   Simonis, G ^a   Koley, B ^a,b   Dagenais, M ^a,b   Feld, S ^a,c   Loehr, J ^a,c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

BRAGG MIRROR STACKS; DIGITAL ALLOYS; DIGITAL GRADINGS; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034187464     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591439     Document Type: Article

References (5)

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5. B. Koley, M. Dagenais, R. Jin, G. Simonis, J. Pham, G. McLane, F. Johnson, and R. Whaley, Jr., Proc. SPIE 3286, 103 (1998).