Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

Superlattices and Microstructures

Volumn 27, Issue 5, 2000, Pages 441-445

  Tuttle, B R ^a   Hess, K ^a   Register, L F ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; DEGRADATION; DESORPTION; ELECTRON TRAPS; HYDROGEN; INTERFACES (MATERIALS); POINT DEFECTS; SEMICONDUCTING SILICON; SILICA;

HOT ELECTRON STRESS;

MOSFET DEVICES;

EID: 0034187449     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0859     Document Type: Article

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