Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures

Superlattices and Microstructures

Volumn 27, Issue 5, 2000, Pages 505-508

  Park, J H ^a   Senzaki, S ^a   Mori, N ^a   Hamaguchi, C ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON TUNNELING; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

DOUBLE QUANTUM WELLS; IMPURITY SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034187149     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0869     Document Type: Article

References (5)

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